Investigation of GeSn/SiGeSn nanostructured layer for sensors in mid-infrared application

被引：0

作者：

Ranjan, Ravi ^{[1
]}

Pareek, Prakash ^{[2
]}

Pandey, Saurabh K. ^{[3
]}

Kumar, Sanjay ^{[1
]}

Mishra, Jitendra K. ^{[4
]}

机构：

[1] Darbhanga Coll Engn, Dept Elect & Elect Engn, Darbhanga, Bihar, India

[2] Vaag Devi Coll Engn, Dept Elect & Commun Engn, Warangal, Andhra Pradesh, India

[3] Indian Inst Technol, Dept Elect Engn, Patna, Bihar, India

[4] Indian Inst Informat Technol, Dept Elect & Commun Engn, Ranchi, Bihar, India

来源：

NANOPHOTONICS VIII | 2021年 / 11345卷

关键词：

Mid-IR; Group IV; GeSn; Quantum Well; strain; SILICON;

D O I：

10.1117/12.2555931

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Ge(1-x)SA(x) material system has been introduced as a potential solution for low-cost high-performance photodetector for short-wave infrared towards mid-infrared detections due to its compatibility with Si CMOS process and wide detection range by incorporating more Sn in the alloy. In this study, an investigation of GeSn/SiGeSn nanostructure layer is reported for sensors for near and mid-infrared applications. We analyze the effect of biaxial strain on SiGeSn/GeSn alloys and determine the range of wavelength in near and mid-infrared range in for the possible application in sensor. The range of wavelength obtains from the calculation of band structure of biaxial strained GeSn.

引用

页数：6

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