Total Ionizing Dose Effects in Passivated and Unpassivated AlGaN/GaN HEMTs

被引：0

作者：

Jiang, Rong ^{[1
]}

Zhang, En Xia ^{[1
]}

Shen, Xiao ^{[2
]}

Chen, Jin ^{[1
]}

Ni, Kai ^{[1
]}

Wang, Pan

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Kaun, Stephen W. ^{[3
]}

Kyle, Erin C. H. ^{[3
]}

Speck, James S. ^{[3
]}

Pantelides, Sokrates T. ^{[1
,4
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

[2] Univ Memphis, Dept Phys & Mat Sci, Memphis, TN 38152 USA

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93117 USA

[4] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年

关键词：

AlGaN/GaN; HEMT; proton irradiation; hot carrier; degradation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and un-passivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.

引用

页数：4

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