Total Ionizing Dose Effects in Passivated and Unpassivated AlGaN/GaN HEMTs

被引：0
作者：
Jiang, Rong [1 ]
Zhang, En Xia [1 ]
Shen, Xiao [2 ]
Chen, Jin [1 ]
Ni, Kai [1 ]
Wang, Pan
Fleetwood, Daniel M. [1 ]
Schrimpf, Ronald D. [1 ]
Kaun, Stephen W. [3 ]
Kyle, Erin C. H. [3 ]
Speck, James S. [3 ]
Pantelides, Sokrates T. [1 ,4 ]
机构：
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA
[2] Univ Memphis, Dept Phys & Mat Sci, Memphis, TN 38152 USA
[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93117 USA
[4] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
来源：
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年
关键词：
AlGaN/GaN; HEMT; proton irradiation; hot carrier; degradation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and un-passivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.
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页数：4
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