On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

被引:18
作者
Garcia-Hemme, Eric [1 ]
Caudevilla, Daniel [1 ]
Algaidy, Sari [1 ]
Perez-Zenteno, Francisco [1 ]
Garcia-Hernansanz, Rodrigo [1 ]
Olea, Javier [1 ]
Pastor, David [1 ]
del Prado, Alvaro [1 ]
San Andres, Enrique [1 ]
Martil, Ignacio [1 ]
Gonzalez-Diaz, German [1 ]
机构
[1] Univ Complutense Madrid, Dept Estruct Mat Fis Term & Elect, Madrid 28040, Spain
关键词
ion implantation; external quantum efficiency; photodiode; pulsed laser melting; transport mechanisms;
D O I
10.1002/aelm.202100788
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work deepens the understanding of the optoelectronic mechanisms ruling hyperdoped-based photodevices and shows the potential of Ti hyperdoped-Si as a fully complementary metal-oxide semiconductor compatible material for room-temperature infrared photodetection technologies. By the combination of ion implantation and laser-based methods, approximate to 20 nm thin hyperdoped single-crystal Si layers with a Ti concentration as high as 10(20) cm(-3) are obtained. The Ti hyperdoped Si/p-Si photodiode shows a room temperature rectification factor at +/- 1 V of 509. Analysis of the temperature-dependent current-voltage characteristics shows that the transport is dominated by two mechanisms: a tunnel mechanism at low bias and a recombination process in the space charge region at high bias. A room-temperature sub-bandgap external quantum efficiency (EQE) extending to 2.5 mu m wavelength is obtained. Temperature-dependent spectral photoresponse behavior reveals an increase of the EQE as the temperature decreases, showing a low-energy photoresponse edge at 0.45 eV and a high-energy photoresponse edge at 0.67 eV. Temperature behavior of the open-circuit voltage correlates with the high-energy photoresponse edge. A model is proposed to relate the optoelectronic mechanisms to sub-bandgap optical transitions involving an impurity band. This model is supported by numerical semiconductor device simulations using the SCAPS software.
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页数:12
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