Revealing hidden pore structure in nanoporous thin films using positronium annihilation lifetime spectroscopy

被引：13
作者：
Peng, HG [1 ]
Frieze, WE
Vallery, RS
Gidley, DW
Moore, DL
Carter, RJ
机构：
[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[2] LSI Log Corp, Gresham, OR 97030 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1886905
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The highly inhomogeneous pore morphology of a plasma-enhanced-chemical-vapor-deposited ultralow-k dielectric film (k=2.2) has been revealed using depth-profiled positronium annihilation lifetime spectroscopy (PALS) combined with progressive etch back of the film surface. The film is found to have a dense surface layer, an intermediate layer of 1.8 nm diameter mesopores, and a deep region of similar to 3 nm diameter mesopores. After successively etching of the sealing layer and the isolated 1.8 nm pore region, PALS reveals that the underlying large pores are highly interconnected. This inhomogeneous pore structure is proposed to account for observed difficulties in film integration. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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