EELS analysis of SiC crystals under hydrogen and helium dual-ion beam irradiation

被引：32

作者：

Hojou, K ^{[1
]}

Furuno, S

Kushita, KN

Sasajima, N

Izui, K

机构：

[1] Japan Atom Energy Res Inst, Dept Mat Sci & Engn, Solid State Phys Lab, Tokai, Ibaraki 31911, Japan

[2] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 464, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期

关键词：

EELS; electron microscopy; SiC; hydrogen ion irradiation; helium ion irradiation; dual-ion irradiation;

D O I：

10.1016/S0168-583X(98)00181-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electron microscopy and Electron energy loss spectroscopy (EELS) measurement were performed in SIC irradiated with three kinds of irradiation mode, namely, H-2(+) ions, He+ ions, and a dual beam of He+ and H-2(+) ions. Amorphization occurred in SiC at a damage density from 0.2 to 0.4 displacement per atom (dpa) irrespective of ion species. High resolution EELS revealed that a large amount of implanted hydrogen is contained in the form of hydrogen molecules and C-H compound in bubbles. It is inferred that some of hydrogen atoms implanted in SIC are trapped in both Si-and C-sites. Most of the helium atoms implanted are considered to exist in bubbles. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：148 / 153

页数：6

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