Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation

被引：5

作者：

Park, Heungman ^{[1
]}

Qi, Jingbo ^{[1
,5
]}

Xu, Ying ^{[1
,6
]}

Varga, Kalman ^{[1
]}

Weiss, Sharon M. ^{[1
,2
]}

Rogers, Bridget R. ^{[3
]}

Luepke, Gunter ^{[4
]}

Tolk, Norman ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[3] Vanderbilt Univ, Dept Chem & Biomol Engn, Nashville, TN 37235 USA

[4] Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA

[5] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[6] Zomega Terahertz Corp, Troy, NY 12180 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 08期

关键词：

defects; frequency conversion; silicon; surfaces and interfaces; DC-ELECTRIC-FIELD; SECOND-HARMONIC GENERATION; INVERSION SYMMETRY; SILICON; REFLECTION; DYNAMICS; MEDIA;

D O I：

10.1002/pssb.200983956

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We review recent second harmonic generation (SHG) measurements for highly boron-doped Si/SiO2 systems. Using electric field sensitive time-dependent SHG (TD-SHG), we determined that the direction of the initial DC electric field at the interface induced by boron induced charge traps is from oxide to silicon thus demonstrating that the boron induced charge traps in the oxide are positively charged. For a thin oxide (similar to 2 nm) both boron traps and O-2 surface oxide traps contribute. However, for a highly boron-doped Si/SiO2 sample with a thick thermally grown oxide (thickness: 12 nm), the TD-SHG signal exhibits a monotonic decrease arising from filling only the boron charge traps. By fitting our data, we show that the interface effective susceptibility vertical bar chi((2))vertical bar is heavily dependent on doping concentration. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1997 / 2001

页数：5

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