Fractional Derivative Phenomenology of Percolative Phonon-Assisted Hopping in Two-Dimensional Disordered Systems

被引:14
作者
Sibatov, Renat [1 ,3 ]
Shulezhko, Vadim [1 ]
Svetukhin, Vyacheslav [1 ,2 ]
机构
[1] Ulyanovsk State Univ, 42 Leo Tolstoy Str, Ulyanovsk 432017, Russia
[2] Russian Acad Sci, Inst Nanotechnol Microelect, 16a Nagatinskaya Str, Moscow 115487, Russia
[3] 49 Transportnaya St, Ulyanovsk 432063, Russia
关键词
anomalous diffusion; hopping; fractional equation; dispersive transport; mesoporous semiconductor; polymer blend; percolation; ELECTRON-TRANSPORT; CHARGE-TRANSPORT; DISPERSIVE TRANSPORT; RANDOM-WALK; DIFFERENTIAL KINETICS; ANOMALOUS DIFFUSION; MODEL; CELLS; DRIFT; SIMULATION;
D O I
10.3390/e19090463
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Anomalous advection-diffusion in two-dimensional semiconductor systems with coexisting energetic and structural disorder is described in the framework of a generalized model of multiple trapping on a comb-like structure. The basic equations of the model contain fractional-order derivatives. To validate the model, we compare analytical solutions with results of a Monte Carlo simulation of phonon-assisted tunneling in two-dimensional patterns of a porous nanoparticle agglomerate and a phase-separated bulk heterojunction. To elucidate the role of directed percolation, we calculate transient current curves of the time-of-flight experiment and the evolution of the mean squared displacement averaged over medium realizations. The variations of the anomalous advection-diffusion parameters as functions of electric field intensity, levels of energetic, and structural disorder are presented.
引用
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页数:14
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