Radiation induced defects in Pb2+-doped LiF crystals

被引:12
作者
Somma, F. [2 ]
Montereali, R. M. [3 ]
Vincenti, M. A. [3 ]
Polosan, S. [1 ]
Secu, M. [1 ]
机构
[1] Natl Inst Mat Phys, POB MG 7, Bucharest 77125, Romania
[2] Univ Roma Tre, Phys Dep, I-00146 Rome, Italy
[3] ENEA, FIM Dep, I-00044 Frascati, Italy
来源
2008 INTERNATIONAL CONFERENCE ON LUMINESCENCE AND OPTICAL SPECTROSCOPY OF CONDENSED MATTER | 2009年 / 2卷 / 02期
关键词
LiF crystal; radiation defects; optical absorption; photoluminescence; LITHIUM-FLUORIDE; COLOR-CENTERS; VACANCY;
D O I
10.1016/j.phpro.2009.07.013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The influence of Pb2+ doping on the optical properties of LiF crystals before and after irradiation with X-ray was studied by using optical absorption and photoluminescence measurements. After irradiation it was observed an increase of the absorption due to primary and aggregate electronic defects together with a higher photoluminescence signals associated with the F-2 and F-3(+) colour centres in doped samples compared with the undoped ones.
引用
收藏
页码:211 / 221
页数:11
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