Dember effect induced photovoltage in perovskite p-n heterojunctions

被引：94
作者：
Jin, Kui-Juan
Zhao, Kun
Lu, Hui-Bin
Liao, Leng
Yang, Guo-Zhen
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2772772
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An unusual and rather large transient lateral photovoltage (LPV) has been observed in La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 and La0.7Sr0.3MnO3/Si heterojunctions under the nonuniform irradiation of pulsed laser. The irreversible LPVs on both sides of a p-n junction challenge the well established model for LPV in conventional semiconductor p-n junctions, which can be well explained by the Dember effect. Much larger LPV is observed in La0.7Sr0.3MnO3/Si than that in La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3. Similar results measured from both substrates of SrNb0.01Ti0.99O3 and Si also support such a Dember effect. Much larger LPVs in heterojunctions than those in simple samples (SrNb0.01Ti0.99O3 or Si) suggest a potential application of Dember effect in heterostructures.
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页数：3
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