Comparison of RSG-MOSFET and capacitive MEMS resonator detection

被引：22

作者：

Abelé, N

Pott, V

Boucart, K

Casset, E

Séguéni, K

Ancey, P

Ionescu, AM

机构：

[1] Ecole Polytech Fed Lausanne, Elect Lab, LEG, Lausanne, Switzerland

[2] STMicroelect, Crolles, France

[3] CEA, LETI, Grenoble, France

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 05期

关键词：

D O I：

10.1049/el:20047409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simulation comparison of MOSFET and double-metal-plate capacitive techniques for vibration detection of MEMS resonator and sensor applications is reported. A novel resonant suspended-gate MOSFET (RSG-MOSFET) analytical model is developed and used for simulating the mechanical and electrical behaviour of the resonant device under electrostatic actuation. It is demonstrated that a MOS-based detection offers signal amplification advantages over conventional capacitive detection especially for narrow beam resonators.

引用

页码：242 / 244

页数：3