Effect of annealing on the structural and optical properties of indium-diffused Cd0.7Zn0.3Se thin films

被引:17
作者
Chavhan, S. D. [1 ]
Senthilarasu, S. [1 ]
Lee, J. [2 ]
Lee, Soo-Hyoung [1 ]
机构
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
[2] Korea Basic Sci Inst, Jeonju Ctr, Jeonju 561756, South Korea
关键词
D O I
10.1088/0022-3727/41/16/165502
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cadmium zinc-selenide (Cd0.7Zn0.3Se) thin films were deposited on the ITO substrate using chemical bath deposition techniques by optimizing the deposition parameters. The as-deposited films were annealed in air at 200, 300 and 400 degrees C for 1 h. The composition, surface morphology and structural properties of the as-deposited and annealed Cd0.7Zn0.3Se thin films were studied using x-ray photoelectron spectroscopy, scanning electron microscopy and x-ray diffraction techniques. The as-deposited films exhibited the hexagonal phase of CdSe and ZnSe. The films annealed at 200 degrees C showed the dominant cubic phase of CdSe and the hexagonal phase of ZnSe. However, the cubic structure of Cd0.7Zn0.3Se was transformed into a hexagonal structure after annealing at 300 and 400 degrees C. The lattice parameter a for the cubic structure was 6.0865 angstrom, whereas for the hexagonal structure a varied from 4.3035 to 4.2938 angstrom and c varied from 7.0916 to 6.9868 angstrom. The optical absorption spectra were recorded within the range 350-800 nm. The optical band gaps were 2.08 eV, 2.03 eV, 1.91 eV and 1.72 eV for the as-deposited films and those annealed at 200 degrees C, 300 degrees C and 400 degrees C, respectively. The drastic decrease in the optical hand gap at 300 and 400 degrees C was due to the indium diffusion into the Cd0.7Zn0.3Se matrix.
引用
收藏
页数:6
相关论文
共 23 条
[1]   Electrochemically deposited photoactive CdIn2Se4 thin films:: Structural and optical studies [J].
Ahn, Ju-Hyun ;
Cai, Gangri ;
Mane, Rajararn S. ;
Todkar, V. V. ;
Shaikh, Arif V. ;
Chung, Hoeil ;
Yoon, Moon-Young ;
Han, Sung-Hwan .
APPLIED SURFACE SCIENCE, 2007, 253 (21) :8588-8591
[2]   Structural and optical properties of ZnxCd1-xSe thin films [J].
Ammar, AH .
PHYSICA B, 2001, 296 (04) :312-318
[3]   Calculation of electronic and optical properties of zinc-blende ZnxCd1-xSe [J].
Benosman, N ;
Amrane, N ;
Aourag, H .
PHYSICA B, 2000, 275 (04) :316-327
[4]   Growth, structural and optical properties of Cd1-xZnxS alloy thin films grown by solution growth technique (SGT) [J].
Borse, S. V. ;
Chavhan, S. D. ;
Sharma, Ramphal .
JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 436 (1-2) :407-414
[5]   A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium [J].
Gu, Y ;
Kuskovsky, OL ;
Robinson, RD ;
Herman, IP ;
Neumark, GF ;
Zhou, X ;
Guo, SP ;
Munoz, M ;
Tamargo, MC .
SOLID STATE COMMUNICATIONS, 2005, 134 (10) :677-681
[6]   Characterization of Cd1-xZnxSe thin films deposited at low temperature by chemical route [J].
Hankare, P. P. ;
Chate, P. A. ;
Asabe, M. R. ;
Delekar, S. D. ;
Mulla, I. S. ;
Garadkar, K. M. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2006, 17 (12) :1055-1063
[7]  
Hodes G., 2003, CHEM SOLUTION DEPOSI, P280
[8]   Cd0.5Zn0.5Se wide range composite thin films for solar cell buffer layer application [J].
Kale, R. B. ;
Lokhande, C. D. ;
Mane, R. S. ;
Han, Sung-Hwan .
APPLIED SURFACE SCIENCE, 2007, 253 (06) :3109-3112
[9]   Systematic study on structural phase behavior of CdSe thin films [J].
Kale, RB ;
Lokhande, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (43) :20288-20294
[10]   Structural and electrical measurements of CdZnSe composite [J].
Kishore, V ;
Saraswat, VK ;
Saxena, NS ;
Sharma, TP .
BULLETIN OF MATERIALS SCIENCE, 2005, 28 (05) :431-436