Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments

被引：242

作者：

Yao, Jiandong ^{[1
]}

Shao, Jianmei ^{[1
]}

Wang, Yingxin ^{[2
]}

Zhao, Ziran ^{[2
]}

Yang, Guowei ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Nanotechnol Res Ctr, Guangzhou 510275, Guangdong, Peoples R China

[2] Tsinghua Univ, Dept Engn Phys, Minist Educ, Key Lab Particle & Radiat Imaging, Beijing 100084, Peoples R China

来源：

NANOSCALE | 2015年 / 7卷 / 29期

基金：

中国国家自然科学基金;

关键词：

TOPOLOGICAL INSULATOR; GRAPHENE PHOTODETECTORS; DEGRADATION PROCESSES; DEVICES; FILMS;

D O I：

10.1039/c5nr02953h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Broadband photodetection is central to various technological applications including imaging, sensing and optical communications. On account of their Dirac-like surface state, Topological insulators (TIs) are theoretically predicted to be promising candidate materials for broadband photodetection from the infrared to the terahertz. Here, we report a vertically-constructed ultra-broadband photodetector based on a TI Bi2Te3-Si heterostructure. The device demonstrated room-temperature photodetection from the ultraviolet (370.6 nm) to terahertz (118 mu m) with good reproducibility. Under bias conditions, the visible responsivity reaches ca. 1 AW(-1) and the response time is better than 100 ms. As a self-powered photodetector, it exhibits extremely high photosensitivity approaching 7.5 x 10(5)cm(2) W-1, and decent detectivity as high as 2.5 x 10(11) cm Hz(1/2) W-1. In addition, such a prototype device without any encapsulation suffers no obvious degradation after long-time exposure to air, high-energy UV illumination and acidic treatment. In summary, we demonstrate that TI-based heterostructures hold great promise for addressing the long lasting predicament of stable room-temperature high-performance broadband photodetectors.

引用

页码：12535 / 12541

页数：7

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