Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots

被引：0
|
作者：
Chen, Tzu-Shan
Lee, Zong-Lin
Hsu, Ming-Yang
Lin, Gray [1 ]
Lin, Sheng-Di
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2017年
关键词：
InAs quantum dots; optical pumping; photonic crystal; semiconductor lasers; surface emitting lasers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAs/InGaAs/GaAs quantum-dot (QD) photonic crystal (PC) surface emitting lasers were fabricated and room-temperature lasing emissions were demonstrated by optical pumping for the first time. The etch depth of PC holes is the critical parameter for adjacent diffraction coupling between PC structure and QD gain media.
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页数：2
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