Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

被引：13
作者：
Jiang, ZM
Pei, CW
Liao, LS [1 ]
Zhou, XF
Zhang, XJ
Wang, X
Jia, QJ
Jiang, XM
Ma, ZH
Smith, TR
Sou, IK
机构：
[1] Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China
[2] BSRF, Inst High Energy Phys, Beijing 100039, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
来源：
THIN SOLID FILMS | 1998年 / 336卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
surface segregation; X-ray reflectivity; molecular beam epitaxy;
D O I：
10.1016/S0040-6090(98)01242-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Surface segregation of Sb atoms at low temperatures below 400 degrees C during Si molecular beam epitaxy (MBE) growth is studied by ex situ X-ray reflectivity measurements and secondary ion mass spectroscopy (SIMS). One monolayer of Sb atoms was first deposited at the temperature of 300 degrees C, followed by a 23-nm thick Si overlayer grown at different temperatures of 250, 300, 350, and 400 degrees C. The decay lengths of dopant Sb distribution profiles are obtained to be 0.15, 0.95, 3.5, and >20 nm by simulations of their X-ray reflectivity curves, respectively. A strong surface segregation of Sb atoms is observed at temperatures of 350 and 400 degrees C, which is also confirmed by the SIMS profiles. Surface structure change caused by a high coverage of Sb is suggested to explain such a strong segregation. (C) 1998 Elsevier Science S.A All rights reserved.
引用
收藏
页码：236 / 239
页数：4
相关论文
共 10 条
[1]   THE INTERACTION OF SB4 MOLECULAR-BEAMS WITH SI(100) SURFACES - MODULATED-BEAM MASS-SPECTROMETRY AND THERMALLY STIMULATED DESORPTION STUDIES [J].
BARNETT, SA ;
WINTERS, HF ;
GREENE, JE .
SURFACE SCIENCE, 1986, 165 (2-3) :303-326
[2]   SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].
BARNETT, SA ;
GREENE, JE .
SURFACE SCIENCE, 1985, 151 (01) :67-90
[3]   SELF-LIMITATION IN THE SURFACE SEGREGATION OF GE ATOMS DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
FUKATSU, S ;
FUJITA, K ;
YAGUCHI, H ;
SHIRAKI, Y ;
ITO, R .
APPLIED PHYSICS LETTERS, 1991, 59 (17) :2103-2105
[4]   SURFACE SEGREGATION AND STRUCTURE OF SB-DOPED SI(100) FILMS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY [J].
HOBART, KD ;
GODBEY, DJ ;
TWIGG, ME ;
FATEMI, M ;
THOMPSON, PE .
SURFACE SCIENCE, 1995, 334 (1-3) :29-38
[5]  
Jiang ZM, 1997, CHINESE PHYS LETT, V14, P686, DOI 10.1088/0256-307X/14/9/013
[6]   RATE THEORY MODEL OF DOPANT INCORPORATION DURING MOLECULAR-BEAM EPITAXY - EFFECTS OF COULOMB REPULSION [J].
KARUNASIRI, RPU ;
GILMER, GH ;
GOSSMANN, HJ .
SURFACE SCIENCE, 1994, 317 (03) :361-370
[7]   Anomalous surface segregation of Sb in Si during epitaxial growth [J].
Kimura, K ;
Endoh, Y ;
Mannami, M ;
Gossmann, HJ ;
Gilmer, GH ;
Feldman, LC .
APPLIED PHYSICS LETTERS, 1996, 69 (01) :67-69
[8]   Critical thickness for the solid phase epitaxy: Si/Sb/Si(001) [J].
Kono, S ;
Goto, T ;
Ogura, Y ;
Abukawa, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (9B) :L1211-L1214
[9]   Crystalline quality of Si epilayers influenced by Sb doping [J].
Lu, XK ;
Jiang, ZM ;
Huang, DM ;
Zhu, HJ ;
Zhang, XJ ;
Wang, X .
JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :169-173
[10]   X-RAY REFLECTIVITY OF AN SB DELTA-DOPING LAYER IN SILICON [J].
SLIJKERMAN, WFJ ;
GAY, JM ;
ZAGWIJN, PM ;
VANDERVEEN, JF ;
MACDONALD, JE ;
WILLIAMS, AA ;
GRAVESTEIJN, DJ ;
VANDEWALLE, GFA .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) :5105-5108
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