Crack-healing in reaction-bonded silicon carbide

被引：19
作者：
Chu, MC [1 ]
Cho, SJ [1 ]
Park, HM [1 ]
Yoon, KJ [1 ]
Ryu, H [1 ]
机构：
[1] Korea Res Inst Stand & Sci, Div Chem Metrol & Mat Evaluat, Taejon 305600, South Korea
来源：
MATERIALS LETTERS | 2004年 / 58卷 / 7-8期
关键词：
reaction-bonded silicon carbide; crack healing; strength; oxidation;
D O I：
10.1016/j.matlet.2003.09.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Crack healing in reaction-bonded silicon carbide (RBSC) was investigated by introducing cracks with the depth of 2.0-2.3 mm into flexure specimens and subsequently heat-treating the specimens at temperatures up to 1300 degreesC. Results showed that the cracks were healed by being filled with amorphous silica produced by the oxidation of silicon and silicon carbide. As the cracks were healed, the strength of cracked specimens was recovered to as much as 60% of the strength of as-machined specimens. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：1313 / 1316
页数：4
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