Ni3Se4/ZnSe Heterostructured Nanowires Grown by Molecular Beam Epitaxy

被引：9

作者：

Wang, Gan ^{[2
]}

Lok, Shu Kin ^{[1
]}

Wong, George K. L. ^{[1
]}

Sou, Iam Keong ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Nano Sci & Technol Program, Kowloon, Hong Kong, Peoples R China

来源：

SMALL | 2011年 / 7卷 / 11期

关键词：

ZNSE NANOWIRES; STRUCTURAL-CHARACTERIZATION; DIRECTION; FILMS;

D O I：

10.1002/smll.201002319

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ni3Se4/ZnSe heterostructured nanowires with a sharp interface are fabricated using nanocatalysts generated on an annealed Au/Ni/ZnSe trilayer. The top Ni3Se4 section acts as an efficient catalyst to assist ultrafast growth of the bottom ZnSe section. A greater understanding of how the effective area and size of the catalyst affect the growth rate and preferred axial orientation of ultrathin nanowires is obtained. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1546 / 1551

页数：6

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