Toward an Efficient Germanium-on-Silicon Laser: Ultimate Limits of Tensile Strain and n-Type Doping

被引：0

作者：

Sukhdeo, David S. ^{[1
]}

Nam, Donguk ^{[1
]}

Yuan, Ze ^{[1
]}

Dutt, Birendra ^{[2
,3
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] APIC Corp, Culver City, CA 90230 USA

[3] PhotonIC Corp, Culver City, CA 90230 USA

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年

关键词：

SI; GE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the ultimate limits of tensile strain and n-type doping for improving germanium lasers. These ultimate limits occur around 2.3-3.7% biaxial strain and 10(18)-10(19) cm(-3) electrically-active doping. >1000x threshold reductions are possible.

引用

页数：2

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