Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective

被引:202
作者
Mir, Showkat Hassan [1 ]
Yadav, Vivek Kumar [1 ]
Singh, Jayant Kumar [1 ,2 ]
机构
[1] IIT Kanpur, Dept Chem Engn, Kanpur 208016, Uttar Pradesh, India
[2] Presci Insilico Private Ltd, Bangalore 560049, Karnataka, India
关键词
DICHALCOGENIDES; PERFORMANCE; TRANSPORT; ARSENENE; BORON; MOS2; RISE; SE;
D O I
10.1021/acsomega.0c01676
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Since the breakthrough of graphene, 2D materials have engrossed tremendous research attention due to their extraordinary properties and potential applications in electronic and optoelectronic devices. The high carrier mobility in the semiconducting material is critical to guarantee a high switching speed and low power dissipation in the corresponding device. Here, we review significant recent advances and important new developments in the carrier mobility of 2D materials based on theoretical investigations. We focus on some of the most widely studied 2D materials, their development, and future applications. Based on the current progress in this field, we conclude the review by providing challenges and an outlook in this field.
引用
收藏
页码:14203 / 14211
页数:9
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