Magnetoresistance in granular magnetic tunnel junctions with Fe nanoparticles embedded in ZnSe semiconducting epilayer

被引：3
作者：
de Moraes, A. R. [1 ]
Saul, C. K. [1 ]
Mosca, D. H. [1 ]
Varalda, J. [2 ]
Schio, P. [2 ]
de Oliveira, A. J. A. [2 ]
Canesqui, M. A. [3 ]
Garcia, V. [4 ,5 ]
Demaille, D. [4 ,5 ]
Eddrief, M. [4 ,5 ]
Etgens, V. H. [4 ,5 ]
George, J. M. [6 ,7 ]
机构：
[1] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, PR, Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
[3] Univ Estadual Campinas, Ctr Componentes Semicond, BR-13083870 Campinas, SP, Brazil
[4] Univ Paris 06, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France
[5] Univ Paris 07, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France
[6] CNRS Thales, Route Dept 128, Unite Mixte Phys, F-91767 Palaiseau, France
[7] Univ Paris 11, F-91405 Orsay, France
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1063/1.2938071
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated transport properties of iron (Fe) nanoparticles embedded in zinc selenide (ZnSe) semiconducting epilayers prepared by molecular beam epitaxy. Both positive and negative tunneling magnetoresistances (TMRs) were measured depending on the applied voltage biases and on the temperature. A slow reduction of the TMR magnitude with temperature was detected and it could be explained in terms of a crossover between direct/resonant tunneling and variable range hopping. The temperature behavior of the magnetoresistance is a clear signature of tunneling and hopping mechanisms mediated by the ZnSe barrier localized states. (C) 2008 American Institute of Physics.
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页数：6
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