High-Performance Photonic Integrated Circuits on Silicon

被引:64
|
作者
Helkey, Roger [1 ]
Saleh, Adel A. M. [2 ,3 ]
Buckwalter, Jim [2 ]
Bowers, John E. [4 ]
机构
[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn & Mat, Santa Barbara, CA 93106 USA
关键词
Silicon photonics; quantum dot lasers; integrated optoelectronics; microwave photonics; optical switches; QUANTUM-DOT LASERS; NOBEL LECTURE; DIODE-LASERS; THRESHOLD; SI; GAAS; MODULATION; LINEWIDTH; OPERATION; LIFETIME;
D O I
10.1109/JSTQE.2019.2903775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heterogeneous integration of 111-V semiconductor photonics combined with silicon foundry technology enables low-cost, high-performance photonic integrated circuits. Highly reliable lasers using epitaxial deposition of quantum dot lasers, with <2 mA threshold and lifetime >> 100 years at 35 C have been demonstrated at University of California, Santa Barbara (UCSB) and can be manufactured at wafer scale. Reduction in the linewidth enhancement factor allows isolator-free operation. This technology enables cost-effective photonic integrated circuits for applications such as microwave photonics and data communications. Optical frequency synthesis with similar to 1.5 Hz accuracy is demonstrated using heterogeneous integration. Silicon photonics applications that will benefit from future heterogeneous integration are also demonstrated, including high dynamic range microwave photonic links and optical switching technology that scales to hyperscale datacenters with hundreds of thousands of servers.
引用
收藏
页数:15
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