Argon plasma immersion ion implantation of polystyrene films

被引：37

作者：

Kondyurin, A. ^{[1
]}

Gan, B. K. ^{[1
]}

Bilek, M. M. M. ^{[1
]}

McKenzie, D. R. ^{[1
]}

Mizuno, K. ^{[1
]}

Wuhrer, R. ^{[2
]}

机构：

[1] Univ Sydney, Sch Phys A28, Sydney, NSW 2006, Australia

[2] Univ Technol Sydney, Microstruct Anal Unit, Sydney, NSW 2007, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 07期

关键词：

plasma immersion ion implantation; polystyrene; etching; surface modification; thin film;

D O I：

10.1016/j.nimb.2008.02.063

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 x 10(14)-2 x 10(16) ions/cm(2), was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1074 / 1084

页数：11

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