Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

被引：10

作者：

Yuan, Ze ^{[1
]}

Nainani, Aneesh ^{[1
,3
]}

Bennett, Brian R. ^{[2
]}

Boos, J. Brad ^{[2
]}

Ancona, Mario G. ^{[2
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] USN, Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

[3] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期

关键词：

CAPACITORS; GAAS;

D O I：

10.1063/1.3699226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Performance degradation due to interfacial traps is generally considered as one of the main challenges for III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this work, we have investigated the suppression of interface state response using band engineering in III-V quantum well MOSFETs and experimentally verified the concept in the antimonide materials system using a gate-stack consisting of Al2O3/GaSb/InAlSb. It is shown that if the thickness of the interfacial layer of GaSb is scaled down to a few monolayers, the effective bandgap of the interfacial layer increases dramatically due to quantum confinement, which leads to the suppression of interface-trap response. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699226]

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页数：4

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