Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact

被引：20

作者：

Cho, Hyun Kyong ^{[1
]}

Susilo, Norman ^{[2
]}

Guttmann, Martin ^{[2
]}

Rass, Jens ^{[1
]}

Ostermay, Ina ^{[1
]}

Hagedorn, Sylvia ^{[1
]}

Ziffer, Eviathar ^{[2
]}

Wernicke, Tim ^{[2
]}

Einfeldt, Sven ^{[1
]}

Weyers, Markus ^{[1
]}

Kneissl, Michael ^{[1
,2
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2020年 / 32卷 / 14期

关键词：

Light emitting diodes; Reflectivity; Indium tin oxide; Annealing; Semiconductor device measurement; Aluminum gallium nitride; Deep UV; light emitting diodes (LEDs); p-AlGaN; reflective p-side contact; efficiency; LIGHT-EMITTING DIODE; OHMIC CONTACTS; TI/AL/MO/AU;

D O I：

10.1109/LPT.2020.3003164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-type contacts with a high reflectivity in the ultraviolet spectral region made of molybdenum/aluminum (Mo/Al) on AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) emitting at 265 nm have been investigated. Optimized Mo/Al contacts are shown to have a high optical reflectivity above 75% at 265 nm. DUV LEDs with an absorbing p-AlGaN heterostructure operated at 20 mA show a 15% higher light output power and a 1 V lower voltage when Mo/Al instead of Pt is used as p-contact. The effect on the voltage of DUV LEDs with a UV-transparent p-side heterostructure is similar. Moreover, DUV LEDs with a Mo/Al contact show a lower operation voltage compared to LEDs with an indium tin oxide/aluminum (ITO/Al) p-contact where the ITO is intended to form a semitransparent low-resistance contact and the Al serves as a reflector.

引用

页码：891 / 894

页数：4

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