Monolitically grown dual wavelength InGaN LEDs for improved CRI

被引：3

作者：

Stauss, P. ^{[1
]}

Mandl, M. ^{[1
]}

Rode, P. ^{[1
]}

Laubsch, A. ^{[1
]}

Biebersdorf, A. ^{[1
]}

Windisch, R. ^{[1
]}

Galler, B. ^{[1
]}

Drechsel, P. ^{[1
]}

Steegmueller, U. ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

InGaN; LED; CRI; EQE;

D O I：

10.1002/pssc.201001073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study we have grown dual wavelength epitaxial LED layer structures by MOCVD. A secondary InGaN MQW is added to the layer structure to optically convert a certain fraction of photons which have been electrically generated in the primary InGaN-MQW. Photoluminescence spectra are compared to electrical ThinGaN (R) chip operation data. The emission spectra clearly display two peaks. The height of the peak generated by the converted photons was adjusted by the number of QWs used in the secondary MQW. Additionally, the influence of the optical ThinGaN (R) light extraction design on the final emission spectrum has been investigated. These emission spectra are discussed in dependence of current density and temperature. Finally, dual MQW ThinGaN (R) devices have been assembled into phosphor converted white high-power LED packages. The measured spectra confirm improved CRI values and are compared to simulated data. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2396 / 2398

页数：3

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