Microstructure evolution and interface structure of Al-40 wt% Si composites produced by high-energy ball milling

被引:44
作者
Chen, Yuanyuan [1 ]
Hu, Zhangping [1 ]
Xu, Yifei [1 ]
Wang, Jiangyong [2 ]
Schuetzenduebe, Peter [3 ]
Huang, Yuan [1 ]
Liu, Yongchang [1 ]
Wang, Zumin [1 ]
机构
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300350, Peoples R China
[2] Shantou Univ, Dept Phys, 243 Daxue Rd, Shantou 515063, Peoples R China
[3] Max Planck Inst Intelligent Syst, Heisenbergstr 3, D-70569 Stuttgart, Germany
基金
中国国家自然科学基金;
关键词
Al-Si composites; Interface structure; High-energy ball milling; Nanocrystalline powders; MECHANICAL-PROPERTIES; WILLIAMSON-HALL; NANOCOMPOSITE POWDERS; THERMAL-EXPANSION; PRIMARY SILICON; AL; ALLOY; FABRICATION; BEHAVIOR;
D O I
10.1016/j.jmst.2018.10.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High silicon content Al-Si composites with a composition of Al-40 wt% Si were fabricated via a highenergy ball milling method. The microstructure evolution of Al-40 wt% Si milled powders and sintered composites has been thoroughly studied by scanning electron microscopy, X-ray diffraction, energy-dispersive spectrometry and high-resolution transmission electron microscopy. The mechanism of ball milling Al-40 wt% Si powders has been disclosed in detail: fracture mechanism dominating in the early stages, followed by the agglomeration mechanism, finally reaching the balance between the fragments and the agglomerates. It has been found that the average particle sizes of mixed Al-Si powders can be refined to the nanoscale, and the crystallite sizes of Al and Si have been reduced to 10 nm and 62 nm upon milling for 2 h-50 h, respectively. The finally formed Al-Si interfaces after ball milling for 50 h are wellcohesive. A dense and homogenous Al-40 wt% Si composite have been achieved by solid-state sintering at 550 degrees C. The results thus provide an effective support for producing bulk nanostructured Al-Si composites. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:512 / 519
页数:8
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