Growth of Si1-x-yGexCy alloy layers on Si by chemical vapor deposition using ethylene

被引：0

作者：

Zheng, YD ^{[1
]}

Jiang, N ^{[1
]}

Han, P ^{[1
]}

Gu, SL ^{[1
]}

Zhu, SM ^{[1
]}

Jiang, RL ^{[1
]}

Shi, Y ^{[1
]}

Lu, WF ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2004年 / 95-96卷

关键词：

chemical vapor deposition; substitutional incorporation; Si1-x-yGexCy alloy;

D O I：

10.4028/www.scientific.net/SSP.95-96.243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality Si1-x-yGexCy alloy layers were grown on Si (100) substrate by rapid thermal processing very low pressure chemical vapor deposition (RTP/VLP-CVD) using ethylene(C2H4) as C source. The composition of Si1-x-yGexCy allow layers were measured by Auger Electron Spectroscopy (AES). The C incorporation mode was characterized by Fourier transform infrared spectroscopy (FTIR). The content of substitutional C in Si1-x-yGexCy alloy layers was calculated from the local vibration mode (LVM) of Si-C bond in FTIR spectroscopy. It was found that the lower temperature and higher SiH4/C2H4 flow ratio are helpful in forming the substitutional C and improving the crystal quality. The mechanism responsible for C incorporation in Si1-x-yGexCy alloy layer grown by RTPNLP-CVD using C2H4 was explained by the reaction between SiH4 and C2H4 at different growth temperature.

引用

页码：243 / 248

页数：6

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