Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

被引：8
作者：
Cao, Siyu [1 ,2 ]
Zhao, Yue [2 ,3 ]
Feng, Shuai [1 ]
Zuo, Yuhua [2 ,3 ]
Zhang, Lichun [4 ]
Cheng, Buwen [2 ,3 ]
Li, Chuanbo [1 ,2 ]
机构：
[1] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
Single-photon avalanche photodiodes; Theoretical analysis; Simulation; Tunneling effect; DESIGN CONSIDERATIONS; INP; PERFORMANCE; MULTIPLICATION; BREAKDOWN; INGAAS; DIODE; LAYER;
D O I：
10.1186/s11671-018-2827-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.
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页数：8
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