Electrically injected GaAsBi/GaAs single quantum well laser diodes

被引：6
|
作者：
Liu, Juanjuan [1 ,2 ]
Pan, Wenwu [1 ,2 ]
Wu, Xiaoyan [1 ,2 ]
Cao, Chunfang [1 ]
Li, Yaoyao [1 ]
Chen, Xiren [2 ,3 ]
Zhang, Yanchao [1 ,4 ]
Wang, Lijuan [1 ]
Yan, Jinyi [1 ]
Zhang, Dongliang [1 ,2 ]
Song, Yuxin [1 ]
Shao, Jun [2 ,3 ]
Wang, Shumin [1 ,5 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[4] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
[5] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
来源：
AIP ADVANCES | 2017年 / 7卷 / 11期
基金：
瑞典研究理事会;
关键词：
THRESHOLD CURRENT-DENSITY; MOLECULAR-BEAM EPITAXY; DOT LASERS; PHOTOLUMINESCENCE; RECOMBINATION; EFFICIENCY;
D O I：
10.1063/1.4985231
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm(-1) and transparency current density of 196 A/cm(2). The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77 similar to 150 K, and reduced to 90Kin the range of 150 similar to 273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77 similar to 273 K. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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页数：8
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