Electrically injected GaAsBi/GaAs single quantum well laser diodes

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm(-1) and transparency current density of 196 A/cm(2). The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77 similar to 150 K, and reduced to 90Kin the range of 150 similar to 273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77 similar to 273 K. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).