Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices

被引:127
|
作者
Zhang, YH [1 ]
Kastrup, J [1 ]
Klann, R [1 ]
Ploog, KH [1 ]
机构
[1] TOKYO INST TECHNOL,RES CTR QUANTUM EFFECT ELECT,MEGURO KU,TOKYO 152,JAPAN
关键词
D O I
10.1103/PhysRevLett.77.3001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A semiconductor superlattice represents an ideal one-dimensional nonlinear dynamical system with a large number of degrees of freedom. The effective nonlinear coupling originates from sequential resonant tunneling between adjacent wells. We have observed spontaneous chaotic and periodic current oscillations in a doped GaAs/AlAs superlattice by changing only the applied bias. When the system is driven with an incommensurate sinusoidal voltage for a fixed bias, transitions between synchronization and chaos are observed via pattern forming bifurcations. A driving signal of sufficiently large amplitude can suppress the occurrence of chaos and produce a synchronized oscillation mode with a subharmonic of the driving frequency.
引用
收藏
页码:3001 / 3004
页数:4
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