RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)

被引：20

作者：

Marti, Diego ^{[1
]}

Bolognesi, C. R. ^{[1
]}

Cordier, Yvon ^{[2
]}

Chmielowska, Magdalena ^{[2
]}

Ramdani, Mohammed ^{[2
]}

机构：

[1] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

[2] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

关键词：

MOLECULAR-BEAM EPITAXY; OUTPUT POWER-DENSITY; HEMTS; GHZ; SUBSTRATE; SI(110); SI(001); GAN;

D O I：

10.1143/APEX.4.064105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first microwave performance for AlGaN/GaN HEMT structures grown by molecular beam epitaxy on Si(110) high-resistivity substrates. Transistors were fabricated with gate lengths of 50, 75, and 100 nm, achieving short-circuit current cutoff frequencies as high as f(T) = 70 GHz and maximum oscillation frequencies of f(MAX(U)) = 93 GHz. Because complementary metal-oxide-semiconductor (CMOS) technology is compatible with (110) substrates, this demonstration establishes a foundation for the future integration of GaN devices into mainstream CMOS on a common Si(110) platform. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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