Two-window InSbBi quantum-dot photodetector

被引：15
作者：
Dwara, Sana N. [1 ]
Al-Khursan, Amin H. [1 ]
机构：
[1] Thi Qar Univ, Coll Sci, NNRL, Nassiriyah, Iraq
来源：
APPLIED OPTICS | 2016年 / 55卷 / 21期
关键词：
EFFICIENCY;
D O I：
10.1364/AO.55.005591
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Quantum efficiency (QE) was modeled for an n-type doping InSb1-xBix quantum-dot (QD) photodetector with a p-type doping AlGaAs bulk region. First, the relations of the electron and hole contributions to the current were stated. The absorption coefficient was calculated for the structure, and two windows were predicted in the quantum efficiency spectrum, which is important in the detection applications. High quantum efficiency was obtained due to the Bi inclusion in the structure of the photodetector. (C) 2016 Optical Society of America
引用
收藏
页码：5591 / 5595
页数：5
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