Pulsed laser deposited ZnO/ZnO:Li multilayer for blue light emitting diodes

被引:14
作者
Chirakkara, Saraswathi [1 ]
Krupanidhi, S. B. [1 ]
机构
[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
关键词
Zinc oxide; Pulsed laser deposition; Li doped ZnO; Multilayer; Photoluminescence; ZNO THIN-FILMS; DOPED ZNO; ZINC-OXIDE; ANNEALING TEMPERATURE; LUMINESCENT CENTER;
D O I
10.1016/j.jlumin.2011.03.052
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin films of ZnO, Li doped ZnO (ZLO) and multilayer of ZnO and ZLO (ZnO/ZLO) were grown on silicon and corning glass substrates by pulsed laser deposition technique. Single phase formation and the crystalline qualities of the films were analyzed by X-ray diffraction and Li composition in the film was investigated to be 15 wt% by X-ray photoelectron spectroscopy. Raman spectrum reveals the hexagonal wurtzite structure of ZnO, ZLO and ZnO/ZLO multilayer and confirms the single phase formation. Films grown on corning glass shows more than 80% transmittance in the visible region and the optical band gaps were calculated to be 3.245, 3.26 and 3.22 eV for ZnO, ZLO and ZnO/ZLO, respectively. An efficient blue emission was observed in all films which were grown on silicon (1 0 0) substrate by photoluminescence (PL). PL measurements at different temperatures reveal that the PL emission intensity of ZnO/ZLO multilayer was weakly dependent on temperature as compared to the single layers of ZnO and ZLO and the wavelength of emission was independent of temperature. Our results indicate that ZnO/ZLO multilayer can be used for the fabrication of blue light emitting diodes. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1649 / 1654
页数:6
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