Effects of high hydrogen dilution ratio on surface topography and mechanical properties of hydrogenated nanocrystalline silicon thin films

被引：10
作者：
Guo, Liqiang [1 ]
Ding, Jianning [1 ,2 ,3 ]
Yang, Jichang [1 ]
Cheng, Guanggui [1 ]
Ling, Zhiyong [1 ]
机构：
[1] Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China
[2] Low Dimens Mat Micro Nana Device & Syst Ctr, Changzhou 213164, Peoples R China
[3] Changzhou Univ, Key Lab New Energy Engn, Changzhou 213164, Peoples R China
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 18期
基金：
中国国家自然科学基金;
关键词：
Surface topography; Mechanical properties; Nanoindentation; Hydrogenation; Nanocrystalline Silicon; Thin Films; Atomic force microscopy; Chemical vapor deposition; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; SOLAR-CELLS; SI-H; HARDNESS; LAYERS;
D O I：
10.1016/j.tsf.2011.04.117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated nanocrystalline silicon thin films were deposited with high hydrogen dilution ratio by plasma enhanced chemical vapor deposition technique. The effects of high hydrogen dilution on the surface topography and mechanical properties of the films were studied with atomic force microscopy and TriboIndenter nano indenter. The results indicate that the average grain size in films deposited with high hydrogen dilution is about 3.18 +/- 0.02 nm. The surface roughness and densification of the films decrease with the increase of hydrogen dilution ratio at certain range, resulting in the enhancement of the elastic modulus E and hardness H. Oppositely, the increase of hydrogen dilution can increase the surface roughness induced by the increase of the cavities on the film surfaces, and lead to the decrease of the elastic modulus and hardness correspondingly. In this paper, the detailed analysis and discussion were carried out to investigate the mechanism of the observed phenomena. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：6039 / 6043
页数：5
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