Self-passivated copper as a gate electrode in a poly-Si thin film transistor liquid crystal display

被引：24

作者：

Chae, GS

Soh, HS

Lee, WH

Lee, JG

机构：

[1] LG Philips LCD, Ctr Res & Dev, Anyang Shi 431080, Kyonggi Do, South Korea

[2] Kookmin Univ, Sch Met & Mat Engn, Seoul 132702, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 01期

关键词：

D O I：

10.1063/1.1375021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-passivated copper as a gate electrode in the form of TiO/Cu/TiO/TiN/SiO2 has been obtained by annealing Cu/Ti/TiN/SiO2. The thickness of Ti in Cu/TiTiN was optimized at 150 Angstrom by forming an 80 Angstrom continuous TiO film on the outer surface of the Cu. The multilayer of SiO2/TiO/Cu/TiO/TiN/SiO2 showed stable electrical passivating properties against Cu diffusion into the top or bottom SiO2. Consequently, self-passivated copper has secured the dielectric properties of plasma enhanced chemical vapor deposition SiO2 and can be utilized as a gate electrode in low temperature poly-Si thin film transistor liquid crystal displays without sacrificing the low resistivity of Cu. (C) 2001 American Institute of Physics.

引用

收藏

页码：411 / 415

页数：5

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