Direct observation of longitudinal spatial hole burning in semiconductor optical amplifiers with injection

被引：14

作者：

Fehr, JN ^{[1
]}

Dupertuis, MA

Hessler, TP

Kappei, L

Marti, D

Selbmann, PE

Deveaud, B

Pleumeekers, JL

Emery, JY

Dagens, B

机构：

[1] Swiss Fed Inst Technol, IMO, Dept Phys, EPFL, CH-1015 Lausanne, Switzerland

[2] Lucent Technol, Bell Labs, Holmdel, NJ 07739 USA

[3] Alcatel Corp, Res Ctr, OPTO, Groupement Interet Econ, F-91461 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期

关键词：

D O I：

10.1063/1.1382623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of spontaneous emission from InGaAsP semiconductor optical amplifiers provide information on both the carrier density and temperature. By spatially resolving the light emitted along the active layer of the device, we find evidence of longitudinal spatial hole burning which results from amplified spontaneous emission in the structure and is modified by the injected optical signal. Under injection, we also observe pronounced asymmetry of the amplified spontaneous emission intensity from the two facets which we relate to the carrier density profile. The experimental results are in good agreement with numerical simulations. An analysis of the measured spectra reveals an unexpected very high temperature (400 K) and its decrease by at least 35 K in the middle of the device when light is injected. (C) 2001 American Institute of Physics.

引用

页码：4079 / 4081

页数：3

共 11 条

[1] High performance 1.55μm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP [J].

Emery, JY ;

Ducellier, T ;

Bachmann, M ;

Doussiere, P ;

Pommereau, F ;

Ngo, R ;

Gaborit, F ;

Goldstein, L ;

Laube, G ;

Barrau, J .

ELECTRONICS LETTERS, 1997, 33 (12) :1083-1084

[2] LONGITUDINAL SPATIAL INHOMOGENEITIES IN HIGH-POWER SEMICONDUCTOR-LASERS [J].

FANG, WCW ;

BETHEA, CG ;

CHEN, YK ;

CHUANG, SL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :117-128

[3]

Fehr J.-N., 2000, Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), P421, DOI 10.1109/CLEO.2000.907198

[4]

FEHR JN, UNPUB FURTHER EXPT P

[5] Gain recovery of bulk semiconductor optical amplifiers [J].

Girardin, F ;

Guekos, G ;

Houbavlis, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (06) :784-786

[6] Characterization of semiconductor lasers by spontaneous emission measurements [J].

Girardin, F ;

Duan, GH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :461-470

[7] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

[8] THE ROLE OF AXIALLY NONUNIFORM CARRIER DENSITY IN ALTERING THE TE-TE GAIN MARGIN IN INGAASP-INP DFB LASERS [J].

KETELSEN, LJP ;

HOSHINO, I ;

ACKERMAN, DA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (04) :957-964

[9] Longitudinal spatial hole burning and associated nonlinear gain in gain-clamped semiconductor optical amplifiers [J].

Pleumeekers, JL ;

Dupertuis, MA ;

Hessler, T ;

Selbmann, PE ;

Haacke, S ;

Deveaud, B .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (05) :879-886

[10]

PLEUMEEKERS JL, 1997, THESIS U DELFT DELFT

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