Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch

被引：0

作者：

Frolov, Daniil ^{[1
]}

Saewert, Greg ^{[1
]}

机构：

[1] Fermilab Natl Accelerator Lab, POB 500, Batavia, IL 60510 USA

来源：

2018 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE (IPMHVC) | 2018年

关键词：

PIP-II; GaN; fast switch; beam kicker; gate synchronization;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.

引用

页码：407 / 410

页数：4