Shielding region effects on a trench gate IGBT

被引：10

作者：

Lee, Jong-Seok ^{[1
]}

Kang, Ey-Goo ^{[2
]}

Sung, Man Young ^{[1
]}

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[2] Far E Univ, Dept Informat Technol, Chung Buk 369851, South Korea

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 01期

关键词：

trench; IGBT; breakdown voltage; on-state voltage drop; shielding region;

D O I：

10.1016/j.mejo.2007.10.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+ shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：57 / 62

页数：6

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