Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs

被引：2
|
作者：
Egorov, VA
Polyakov, NK
Tonkikh, AA
Petrov, VN
Cirlin, GE
Volovik, BV
Zhukov, AE
Musikhin, YG
Cherkashin, NA
Ustinov, VM
机构：
[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia
[2] RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia
来源：
APPLIED SURFACE SCIENCE | 2001年 / 175卷
基金：
俄罗斯基础研究基金会;
关键词：
photoluminescence; quantum dot; molecular beam epitaxy;
D O I：
10.1016/S0169-4332(01)00038-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Optical and structural properties of heterostructures with InAs quantum dots overgrown by InGaAs quantum well and multilayer structures with InAs/GaAs quantum dots are investigated. Different growth techniques are used for the formation of an In-content region. It is shown that under optimal growth conditions, the 1.3 mum emission could be achieved for both type of structures. For multilayer structures, 1.4 mum emitting is achieved. Different scenarios of quantum dots multilayer structures evaluation are discussed in a frame of elastic theory to explain differences in the properties of the grown multilayer structures, (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：243 / 248
页数：6
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