Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs

被引：2

作者：

Egorov, VA

Polyakov, NK

Tonkikh, AA

Petrov, VN

Cirlin, GE

Volovik, BV

Zhukov, AE

Musikhin, YG

Cherkashin, NA

Ustinov, VM

机构：

[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

APPLIED SURFACE SCIENCE | 2001年 / 175卷

基金：

俄罗斯基础研究基金会;

关键词：

photoluminescence; quantum dot; molecular beam epitaxy;

D O I：

10.1016/S0169-4332(01)00038-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Optical and structural properties of heterostructures with InAs quantum dots overgrown by InGaAs quantum well and multilayer structures with InAs/GaAs quantum dots are investigated. Different growth techniques are used for the formation of an In-content region. It is shown that under optimal growth conditions, the 1.3 mum emission could be achieved for both type of structures. For multilayer structures, 1.4 mum emitting is achieved. Different scenarios of quantum dots multilayer structures evaluation are discussed in a frame of elastic theory to explain differences in the properties of the grown multilayer structures, (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：243 / 248

页数：6

共 50 条

[31] Enhanced terahertz emission from InAs quantum dots on GaAs
Park, Hongkyu
Kim, Jeonghoi
Jung, Euna
Choi, Wonjun
Lee, Jungil
Han, Haewook
OPTOELETRONIC MATERIALS AND DEVICES, PTS 1 AND 2, 2006, 6352
[32] Enhancement of Structural and Optical Properties of 1.3 μm InGaAs/GaAs Quantum Dots through the Growth of a Barrier at an Elevated Temperature
Pyun, S. H.
Jeong, Weon G.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (02) : 725 - 728
[33] Photoluminescence beyond 1.5 μm from InAs quantum dots
Ng, J. S.
Liu, H. Y.
Steer, M. J.
Hopkinson, M.
David, J. P. R.
MICROELECTRONICS JOURNAL, 2006, 37 (12) : 1468 - 1470
[34] Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing
Polupan, Georgiy
Torchynska, Tetyana
Vega Macotela, Leonardo G.
Cisneros Tamayo, Ricardo
Escobosa Echavarria, Arturo
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (03) : 2643 - 2649
[35] Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼1.3 μm
Maximov, MV
Tsatsul'nikov, AF
Volovik, BV
Bedarev, DA
Shernyakov, YM
Kaiander, IN
Kondrat'eva, EY
Zhukov, AE
Kovsh, AR
Maleev, NA
Mikhrin, SS
Ustinov, VM
Musikhin, YG
Kop'ev, PS
Alferov, ZI
Heitz, R
Ledentsov, NN
Bimberg, D
MICROELECTRONIC ENGINEERING, 2000, 51-2 : 61 - 72
[36] Optically-detected microwave resonance in InGaAsN/GaAs quantum wells and InAs/GaAs quantum dots emitting around 1.3 μm
Baranov, P. G.
Romanov, N. G.
Preobrazhenski, V. L.
Egorov, A. Yu.
Ustinov, V. M.
Sobolev, M. M.
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 2, NO 6, 2003, 2 (06): : 469 - 478
[37] Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots
Saucer, T. W.
Lee, J-E.
Martin, A. J.
Tien, D.
Millunchick, J. M.
Sih, V.
SOLID STATE COMMUNICATIONS, 2011, 151 (04) : 269 - 271
[38] Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs (211)B
Guo, SP
Ohno, H
Shen, AD
Ohno, Y
Matsukura, F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1527 - 1531
[39] Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs
Kosarev, Alexander
Bert, Nikolay
Nevedomskii, Vladimir
Chaldyshev, Vladimir
Preobrazhenskii, Valerii
Putyato, Mikhail
Semyagin, Boris
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (05):
[40] GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm
Sadofyev, Yu. G.
Samal, N.
Andreev, B. A.
Gavrilenko, V. I.
Morozov, S. V.
Spivakov, A. G.
Yablonsky, A. N.
SEMICONDUCTORS, 2010, 44 (03) : 405 - 412

← 1 2 3 4 5 →