Depolarization field in thin ferroelectric films with account of semiconductor electrodes

被引:6
作者
Glinchuk, MD [1 ]
Zaulychny, BY
Stephanovich, VA
机构
[1] Natl Acad Sci Ukraine, Inst Problems Mat Sci, Kiev, Ukraine
[2] Univ Opole, Inst Math & Informat, PL-45052 Opole, Poland
关键词
thin ferroelectric films; semiconducting electrodes; depolarization field; variational method;
D O I
10.1080/00150190590963057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Within the framework of the phenomenological Ginzburg-Landau theory influence of semiconductor electrodes on the properties of thin ferroelectric films is considered. The contribution of the semiconductor electrodes with different Debye screening length of carriers is included in the functional of free energy. The influence of highly doped semiconductor electrodes on the depolarization field and the film properties was shown to be great.
引用
收藏
页码:1 / 6
页数:6
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