Single-wafer pressure capacitive sensor

被引：1

作者：

Bolea, R. G. ^{[1
]}

Luque, A. ^{[1
]}

Quero, J. M. ^{[1
]}

机构：

[1] Univ Seville, Dpto Ingn Electron, Seville, Spain

来源：

2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 | 2007年

关键词：

D O I：

10.1109/ISCAS.2007.378220

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A novel manufacturing process for pressure sensor without the need of wafer bonding is presented. Its main advantages are a simple fabrication process and an efficient integrability with other devices. The sensor is composed of a polysilicon membrane that deflects due to the pressure difference applied over it. Two operation regions are observed: a non-linear sensitivity region at low pressure (0-30 kPa) and a linear one (30-200 kPa) in touch mode. A capacitance-to-frequency conversion circuitry is designed and validated to provide a sensitive sensing module. Experimental results show a sensitivity of 28.7 fF/kPa and of 13.93 Hz/kPa in the nonlinear region. Among the most significant features of this device are versatility, high reliability, integrability and high sensivity.

引用

页码：3315 / 3318

页数：4

共 4 条

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[4] Integrable silicon microfluidic valve with pneumatic actuation
Luque, A
Quero, JM
Hibert, C
Flückiger, P
Gañán-Calvo, AM
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