CHARACTERIZATION OF HIGH-PHOTOCURRENT AND HIGH-SPEED INP-BASED UNI-TRAVELING-CARRIER PHOTODIODES AT 1.55-μm WAVELENGTH

被引：2

作者：

Meng, Qianqian ^{[1
]}

Wang, Hong ^{[1
,2
]}

Liu, Chongyang ^{[1
]}

Gao, Jianjun ^{[3
]}

Tian, Yang ^{[1
]}

Ang, Kian Siong ^{[1
]}

Guo, Xin ^{[1
]}

Gao, Bo ^{[4
]}

机构：

[1] Nanyang Technol Univ, Temasek Labs NTU TL NTU, 50 Nanyang Dr, Singapore 637553, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore

[3] East China Normal Univ, Sch Informat Sci & Technol, Shanghai 200262, Peoples R China

[4] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, 28 Xianning West Rd, Xian 710049, Shaanxi, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2016年 / 58卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

uni-traveling-carrier photodiodes; dipole-doped structure; parameter extraction; frequency response; 3-dB bandwidth; PARAMETER-EXTRACTION METHOD; EQUIVALENT-CIRCUIT MODEL; I-N PHOTODIODES; QUANTUM-WELL LASER;

D O I：

10.1002/mop.29997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based unitraveling- carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz. (C) 2016 Wiley Periodicals, Inc.

引用

页码：2156 / 2162

页数：8

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