The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

被引：21

作者：

Bubulac, L. O. ^{[1
,2
]}

Benson, J. D. ^{[1
]}

Jacobs, R. N. ^{[1
]}

Stoltz, A. J. ^{[1
]}

Jaime-Vasquez, M. ^{[1
]}

Almeida, L. A. ^{[1
]}

Wang, A. ^{[3
]}

Wang, L. ^{[3
]}

Hellmer, R. ^{[4
]}

Golding, T. ^{[4
]}

Dinan, J. H. ^{[4
]}

Carmody, M. ^{[5
]}

Wijewarnasuriya, P. S. ^{[6
]}

Lee, M. F. ^{[7
]}

Vilela, M. F. ^{[7
]}

Peterson, J. ^{[7
]}

Johnson, S. M. ^{[7
]}

Lofgreen, D. F. ^{[7
]}

Rhiger, D. ^{[7
]}

机构：

[1] USA, RDECOM, CERDEC Night Vis & Elect Sensors Directorate, Ft Belvoir, VA USA

[2] RAND Corp, Santa Monica, CA USA

[3] Evans Analyt Grp, Sunnyvale, CA USA

[4] Amethyst, Ardmore, OK USA

[5] EPIR Technol, Chicago, IL USA

[6] USA, Res Lab, Adelphi, MD USA

[7] Raytheon Vis Syst, Goleta, CA USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 03期

关键词：

HgCdTe; discrete species; Si; FPA; dislocation; enhanced diffusion; diffusion pipes;

D O I：

10.1007/s11664-010-1505-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on CdZnTe. The starting point for the model is the close agreement between the aerial density of discrete species (particles, contamination spots, crystalline defects on Si surface) in various interfaces in the HgCdTe/CdTe/Si structure and the density of failed pixels in the array. The density of discrete species is acquired by applying a newly developed variation of the secondary-ion mass spectrometry( SIMS) depth-profiling technique to samples that have been deuterated to enhance detection. A mechanism of selective activation of threading dislocations in a HgCdTe layer on Si is proposed to link discrete species with failed detector pixels.

引用

页码：280 / 288

页数：9

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