Patternable Solution-Crystallized Organic Transistors with High Charge Carrier Mobility

被引：331

作者：

Nakayama, Kengo ^{[2
]}

Hirose, Yuri ^{[2
]}

Soeda, Junshi ^{[3
]}

Yoshizumi, Masahiro ^{[3
]}

Uemura, Takafumi ^{[2
]}

Uno, Mayumi ^{[2
]}

Li, Wanyan ^{[2
]}

Kang, Myeong Jin ^{[1
]}

Yamagishi, Masakazu ^{[3
]}

Okada, Yugo ^{[3
]}

Miyazaki, Eigo ^{[1
]}

Nakazawa, Yasuhiro ^{[3
]}

Nakao, Akiko ^{[4
]}

Takimiya, Kazuo ^{[1
]}

Takeya, Jun ^{[2
]}

机构：

[1] Hiroshima Univ, Grad Sch Engn, Hiroshima 7398527, Japan

[2] Osaka Univ, ISIR, Osaka 5670047, Japan

[3] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

[4] High Energy Accelerator Org, KEK, Tsukuba, Ibaraki 3050801, Japan

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 14期

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; POLYMER;

D O I：

10.1002/adma.201004387

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Patternable solution-crystallized organic transistors are developed with very high carrier mobilities that exceed 10 cm(2) V (1) s (1). The devices feature a newly synthesized air-stable compound 2,9-didecyldi-naphtho[2,3-b: 2', 3'-f] thieno[3,2-b] thiophene (C(10)-DNTT) and are formed from hot solution. A method of oriented growth is introduced to obtain the single-crystalline films of C(10)-DNTT, regulating the crystallizing direction and the positions in a single process.

引用

页码：1626 / +

页数：5

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