High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition

被引:20
作者
Ryou, JH
Dupuis, RD [1 ]
Mathes, DT
Hull, R
Reddy, CV
Narayanamurti, V
机构
[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA
[2] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22906 USA
[3] Harvard Univ, Gordon McKay Lab Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1063/1.1376665
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe the characteristics of high-density InP self-assembled quantum dots embedded in In0.5Al0.5P cladding layers grown at 650 degreesC on GaAs (100) substrates by metalorganic chemical vapor deposition. Quantum dots grown with different deposition times are characterized by atomic force microscopy, photoluminescence, and transmission electron microscopy. For certain growth conditions, we observe the formation of a high density of quantum dots on the order of 10(10) cm(-2). The quantum dot average height increases from similar to5 to similar to 25 nm with deposition time, while the quantum dot density changes insignificantly. Photoluminescence (4 K) shows a gradual shift of emission spectral peak from 2.06 eV (for 7.5 ML) to 1.82 eV (for 22.5 ML), corresponding to changes in the dominant quantum dot size. Also, incoherent quantum dot formation is not observed for up to 15 ML growth. (C) 2001 American Institute of Physics.
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收藏
页码:3526 / 3528
页数:3
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