XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer

被引：0

作者：

Fu, DC ^{[1
]}

Jusoh, MS ^{[1
]}

Mat, AFA ^{[1
]}

Majlis, BY ^{[1
]}

机构：

[1] Univ Kebangsaan Malaysia, TM Microelect Res Ctr, Fac Engn, Bangi 43600, Malaysia

来源：

2002 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al0.3Ga0.7As (x=0.3) and InxGa1-xAs (x=0.2-0.4) on GaAs(100) substrate were examined by x-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.

引用

页码：514 / 517

页数：4

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