Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

被引:19
作者
Li, Siwei [1 ,2 ]
Zeng, Bin [1 ]
Feng, Zude [1 ]
Liu, Yongsheng [2 ]
Yang, Wenbin [2 ]
Cheng, Iaifei [2 ]
Zhang, Litong [2 ]
机构
[1] Xiamen Univ, Coll Mat, Fujian Key Lab Adv Mat, Xiamen 361005, Peoples R China
[2] Northwestern Polytech Univ, Natl Key Lab Thermostruct Composite Mat, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
Amorphous boron carbide; Annealing; Microstructure; Epitaxial growth; Chemical vapor deposition; SIC/SIC COMPOSITES; CARBON; GROWTH; MIXTURES; RANGE; PHASE;
D O I
10.1016/j.tsf.2010.08.099
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH4/BCl3/H-2 precursor mixture at a low temperature of 950 degrees C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 degrees C, 1700 degrees C, 1800 degrees C, 1900 degrees C and 2000 degrees C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B4C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B4C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:251 / 258
页数:8
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