Light induced phenomena in microcrystalline silicon

被引：20

作者：

Kondo, M ^{[1
]}

Nishimiya, T ^{[1
]}

Saito, K ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Ibaraki, Osaka 305, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

microcrystalline silicon; spin density; light induced electron split resonance;

D O I：

10.1016/S0022-3093(98)00276-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Light induced phenomena in hydrogenated microcrystalline silicon (mu c-Si:H), i.e., light induced electron spin resonance (LESR) and light induced defect formation are studied. A single resonance line with a g-value of 1.998 is induced by the band gap light of c-Si (h nu > 1.1 eV) at low temperatures of T < 80 K. It is suggested from the spin density and its temperature dependence that this center is a trapped electron at a shallow conduction band tail state of Si crystallites. The defect formation has been observed by the ESR after prolonged light exposure. The defect formation correlates with the surface oxidation. A surface band bending model due to the oxidation is proposed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1031 / 1035

页数：5

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